SUD50N025-09BP trenchfet power mosfet 100% r g tested rohs compliant
dc/dc conversion, high-side ? desktop pc rohs n-channel 25-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) a, e q g (typ) 25 0.0086 @ v gs = 10 v 62 18 5 nc 25 0.012 @ v gs = 4.5 v 52 18 . 5 n c n-channel mosfet g d s ordering information: SUD50N025-09BP?e3 (lead (pb)-free) to-252 s gd top view drain connected to tab
parameter symbol limit unit drain-source voltage v ds 25 v gate-source voltage v gs 20 v t c = 25 c 62 e continuous drain current (t 175 c) t c = 70 c i 51 e continuous drain current (t j = 175 c) t a = 25 c i d 26 b, c t a = 70 c 22 b, c a pulsed drain current i dm 100 a continuous source drain diode current t c = 25 c i 37 continuous source-drain diode current t a = 25 c i s 6.7 b, c avalanche current pulse l 01mh i as 28 single pulse avalanche energy l = 0.1 mh e as 39.2 mj t c = 25 c 55 maximum power dissipation t c = 70 c p 39 w maximum power dissipation t a = 25 c p d 10 b, c w t a = 70 c 7 b, c operating junction and storage temperature range t j , t stg ?55 to 175 c
parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 sec r thja 12 15 c/w maximum junction-to-case steady state r thjc 2.2 2.7 c/w notes: a. based on t c = 25 c. b. surface mounted on 1? x 1? fr4 board. c. t = 10 sec d. maximum under steady state conditions is 50 c/w. e. calculated based on maximum junction temperature. package limitation current is 50 a. www.freescale.net.cn 1 / 7
parameter symbol test condition min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 25 v v ds temperature coefficient v ds /t j i = 250 a 20 mv/ c v gs(th) temperature coefficient v gs(th) /t j i d = 250 a ? 6.3 mv/ c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.4 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i v ds = 25 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 25 v, v gs = 0 v, t j = 55 c 10 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 100 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 26 a 0.007 0.0086 d ra i n- s ource o n- s tate r es i stance a r ds(on) v gs = 4.5 v, i d = 22 a 0.0096 0.012 forward transconductance a g fs v ds = 15 v, i d = 26 a 46 s dynamic b input capacitance c iss 2020 output capacitance c oss v ds = 12 v, v gs = 0 v, f = 1 mhz 485 pf reverse transfer capacitance c rss 245 p total gate charge q v ds = 12 v, v gs = 10 v, i d = 26 a 38 57 total gate charge q g 18.5 28 nc gate-source charge q gs v ds = 12 v, v gs = 4.5 v, i d = 26 a 7 nc gate-drain charge q gd 6.5 gate resistance r g f = 1 mhz 0.9 1.4 turn-on delay time t d(on) 9 14 rise time t r v dd = 12 v, r l = 0.54 8 12 turn-off delay time t d(off) v dd = 12 v , r l = 0 . 54 i d 22 a, v gen = 10 v, r g = 1 20 30 fall time t f g 8 12 ns turn-on delay time t d(on) 17 26 ns rise time t r v dd = 12 v, r l = 0.54 15 23 turn-off delay time t d(off) v dd = 12 v , r l = 0 . 54 i d 22 a, v gen = 4.5 v, r g = 1 17 26 fall time t f g 8 12 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 37 a pulse diode forward current a i sm 100 a body diode voltage v sd i s = 6.7 a 0.9 1.5 v body diode reverse recovery time t rr 26 40 ns body diode reverse recovery charge q rr i 6 7 a di/dt 100 a/ st 25 c 16 24 nc reverse recovery fall time t a i f = 6.7 a, di/dt = 100 a/ s, t j = 25 c 12 ns reverse recovery rise time t b 14 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. SUD50N025-09BP n-channel 25-v (d-s) mosfet www.freescale.net.cn 2 / 7
0 20406080100 0 2 4 6 8 10 0 10203040 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ?50 ?25 0 25 50 75 100 125 150 175 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 c rss c oss c iss gate charge on-resistance vs. drain current q g (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature r ds(on) ? on-resistance (normalized) 0 4 8 12 16 20 1.0 1.5 2.0 2.5 3.0 3.5 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d r ds(on) ? on-resistance ( ) 0.0200 0.0175 0.0150 0.0125 0.0100 0.0075 0.0050 v gs (v) v gs = 10 v thru 5 v 3 v 4 v t c = 25 c t c = ?55 c t c =125 c v gs = 10 v v gs = 4.5 v i d = 26 a v ds = 12 v v ds = 18 v i d = 20 a v gs = 4.5 v, 10 v SUD50N025-09BP n-channel 25-v (d-s) mosfet www.freescale.net.cn 3 / 7
0.3 0.6 0.9 1.2 0246810 source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s r ds(on) vs v gs vs. temperature v gs ? gate-to-source voltage (v) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 ?50 ?25 0 25 50 75 100 125 150 175 threshold voltage t j ? temperature ( c) 0 480 720 120 240 power (w) time (sec) 600 10 1000 0.1 0.01 0.001 single pulse power, junction-to-ambient r ds(on) on-resistance ( ) v gs(th) ? (v) 360 100 1 safe operating area 0.1 1 10 100 v ds (v) *v gs minimum v gs at which r ds(on) is specified 1 10 100 0.000 0.006 0.012 0.018 0.024 i d (a) 0.001 0.10 1 10 100 1000 1 ms 10 ms 100 ms 1 10 dc t j = 25 c t j = 150 c i d = 20 a t a = 25 c t a = 125 c t a = 25 c i d = 250 a *limited by r ds(on) t a = 25 c single pulse 0.01 SUD50N025-09BP n-channel 25-v (d-s) mosfet www.freescale.net.cn 4 / 7
0 4 8 12 16 0 25 50 75 100 125 150 175 current de-rating drain current (a) t c ? case temperature ( c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175 power de-rating t c ? case temperature ( c) power 10 ?3 10 ?2 1 10 600 10 ?1 10 ?4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm SUD50N025-09BP n-channel 25-v (d-s) mosfet www.freescale.net.cn 5 / 7
10 ?3 10 ?2 110 10 ?1 10 ?4 2 1 0.1 0.01 0.2 duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.1 0.05 0.02 single pulse SUD50N025-09BP n-channel 25-v (d-s) mosfet www.freescale.net.cn 6 / 7
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